Cặp sò thúc H649/H669 Loại Tốt

Cặp sò thúc H649/H669 Loại Tốt - 1 Cặp

Sò thúc hoặc transistor làm đèn đệm, đèn thúc cho mạch công suất âm ly đều có thông số đặc biệt, khác những dòng transistor thường, 1 số cặp thúc thông dụng như: H649/H669 - A1837/C4793 - A940/C2073...

Thông số kỹ thuật của H649/H669 như sau:

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 180 V
2SD669 120 Collector-Emitter Voltage 2SD669A
VCEO 160V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Peak Current lC(PEAK) 3 A
Collector Power Dissipation SOT-223 0.5 W
Collector Power Dissipation TO-126
PD 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V
Collector to Emitter Breakdown 2SD669 120
Voltage 2SD669A BVCEO IC=10mA, RBE=∞ 160 V
Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V
Collector Cut-off Current ICBO VCB=160V, IE=0 10 µA
hFE1 VCE=5V, IC=150mA (Note) 60 320 DC Current Gain hFE2 VCE=5V, IC=500mA (Note) 30
Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 1 V
Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) 1.5 V
Current Gain Bandwidth Product fT VCE=5V, IC=150mA (Note) 140 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
Note: Pulse test.
„ CLASSIFICATION OF hFE1
RANK B C D
RANGE 60-120 100-200 160-320